Oxygen plasma reduction to eliminate precursor overflow in...

Details Oxygen plasma reduction to eliminate precursor overflow in... Oxygen plasma reduction to eliminate precursor overflow in...

2011-06-07

2011-06-07

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S680000, C257SE21159

Reexamination Certificate

active

07955993

ABSTRACT:
A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an O2plasma.

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