Oxygen ion implantation procedure to increase the surface area o

Details Oxygen ion implantation procedure to increase the surface area o Oxygen ion implantation procedure to increase the surface area o

1997-05-19

1999-05-04

Chang, Joni Y.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218242

Patent

active

058997164

ABSTRACT:
A method of creating an STC structure, used for high density, DRAM designs, has been developed. The process consists of creating a storage node electrode, for the STC structure, with increased surface area, resulting from the formation of protruding polysilicon shapes. The protruding polysilicon shapes are obtained using dielectric regions as a mask during a selective, anisotropic RIE procedure, used to define the storage node electrode shape. The dielectric regions are created via oxygen ion implantation into exposed regions of a polysilicon layer. An anneal is used to convert the oxygen implanted polysilicon regions, to dielectric regions.

REFERENCES:
patent: 5077225 (1991-12-01), Lee
patent: 5429980 (1995-07-01), Yang et al.
patent: 5604146 (1997-02-01), Tseng
patent: 5656532 (1997-08-01), Tseng

Affiliated with

Also associated with

Rating

Oxygen ion implantation procedure to increase the surface area o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Oxygen ion implantation procedure to increase the surface area o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oxygen ion implantation procedure to increase the surface area o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1865240