Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-06-01
2011-11-08
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S327000, C257S368000, C257SE29277
Reexamination Certificate
active
08053836
ABSTRACT:
An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.
REFERENCES:
patent: 2009/0294772 (2009-12-01), Jeong et al.
Cheng Chun-Cheng
Hsiao Shih-Hua
Huang Jian-Jang
Liu Kuang-Chung
Yeh Yung-Hui
Industrial Technology Research Institute
Morris Manning & Martin LLP
National Taiwan University
Pert Evan
Tingkang Xia, Esq. Tim
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