Oxide profile modification by reactant shunting

Details Oxide profile modification by reactant shunting Oxide profile modification by reactant shunting

1997-10-01

2000-07-04

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438448, 438297, H01L 2176

Patent

active

060838094

ABSTRACT:
A method of fabricating a semiconductor device and the device which includes initially providing a layer of silicon having a thin oxide layer thereon and a patterned layer of a masking material not permeable to at least selected oxygen-bearing species and having a sidewall disposed over said oxide layer to provide an exposed intersection of the masking material and the oxide layer. An oxygen-bearing species conductive path is then formed on the sidewall of the masking material extending to the exposed intersection for conducting the selected oxygen-bearing species. A sidewall layer of a material different from the conductive path is formed on the conductive path. An oxygen-bearing species is then applied to the exposed intersection through the path and a thick oxide surrounding the masking material is fabricated concurrently or as a separate step. The masking material is preferably silicon nitride, the path is preferably silicon oxide and the sidewall layer is preferably silicon nitride.

REFERENCES:
patent: 5538916 (1996-07-01), Kuroi et al.
patent: 5629230 (1997-05-01), Frazan et al.

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