Oxide-nitride stack gate dielectric

Details Oxide-nitride stack gate dielectric Oxide-nitride stack gate dielectric

2008-05-13

2008-05-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21411, C257SE21192, C257SE21129

Reexamination Certificate

active

07371637

ABSTRACT:
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

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