Oxide formation process for manufacturing programmable logic dev

Details Oxide formation process for manufacturing programmable logic dev Oxide formation process for manufacturing programmable logic dev

1996-08-19

1999-09-28

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438981, 438275, 438264, 257318, H01L 218247

Patent

active

059602740

ABSTRACT:
A method of providing oxide layers at the surface of the semiconductor substrate suitable for use with the formation of programmable logic devices. The method comprises the steps of: depositing a layer of nitride on the surface of the semiconductor substrate; etching a first and second portions of the nitride layer; forming a first and second regions of a first oxide layer on the substrate in the first and second etched portions of the nitride layer; etching a the first region of the oxide; forming a second oxide layer on the substrate having a first portion in the first etched portion of the nitride and a second portion overlying the first portion of the second region of the first oxide layer; removing the nitride layer; and forming a third layer of oxide having a first portion on the surface of the substrate, a second and third portions on the first and second portions of the second oxide layer.

REFERENCES:
patent: 5591658 (1997-01-01), Cacharelis
patent: 5591681 (1997-01-01), Wristers et al.
patent: 5637520 (1997-06-01), Cappelletti et al.
patent: 5658812 (1997-08-01), Araki
patent: 5672521 (1997-09-01), Barsan et al.
patent: 5756385 (1998-05-01), Yuan et al.

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