Oxide film thickness standards

Details Oxide film thickness standards Oxide film thickness standards

1998-04-22

1999-12-28

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

356357, 356382, H01L 2358, G01B 1102

Patent

active

060085037

ABSTRACT:
A film thickness standard (FTS) comprises an oxide film formed on a semiconductor substrate with a thickness over 1 .mu.m. A method of preparing an oxide film thickness standard reference of semiconductor device is carried out by repeatedly and continuously performing the formation process of the oxide film under the same processing conditions thereby to form the oxide film on a semiconductor substrate with a thickness over a certain level.

REFERENCES:
patent: 4355903 (1982-10-01), Sandercock
patent: 5356722 (1994-10-01), Nguyen et al.
patent: 5486701 (1996-01-01), Norton et al.
patent: 5686993 (1997-11-01), Kokubo et al.
VLSI Standards Incorporated, 1996 Product Guide.

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