Oxide epitaxial isolation

Details Oxide epitaxial isolation Oxide epitaxial isolation

2011-01-04

2011-01-04

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21688, C257SE21687, C257SE21680, C257SE21422, C257SE21179

Reexamination Certificate

active

07863133

ABSTRACT:
Non-volatile memory cell structures are described that are formed by a method including forming a first oxide layer on a horizontal strained substrate, forming at least one first recess through the first oxide layer to the strained substrate, and forming at least one vertical epitaxial structure in the recess. A crystal lattice of the vertical epitaxial structure is aligned with a crystal lattice of the strained substrate.

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