Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-16
2006-05-16
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S421000
Reexamination Certificate
active
07045841
ABSTRACT:
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by radical oxidation. The underlying surfactant layer contributes oxygen to the bottom surface of the Al, forming an initial amorphous Al2O3layer. This layer produces small, uniform grains in the remaining Al layer, which promotes a uniform oxidation of the Al between its upper and lower surfaces by the subsequent radical oxidation. A final annealing process to set a pinned layer magnetization enhances the homogeneous oxidation of the layer.
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U.S. Appl. No. HT-03-022, U.S. Appl. No. 10/844,171, filed May. 12, 2004, “A Novel Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction MRAM”, Assigned to the Same Assignee as the Present Invention.
Hong Cheng T.
Tong Ru-Ying
Ackerman Stephen A.
Applied Spintronics Inc.
Saile George O.
Tsai H. Jey
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