Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-04-22
1999-09-28
Williams, Alexander Oscar
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257752, H01L 2354, H01L 2348, C23C 1434
Patent
active
059593580
ABSTRACT:
A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
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Ding Peijun
Lanford William A.
Research Foundation of State University of New York
Williams Alexander Oscar
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