Static information storage and retrieval – Read/write circuit – Including signal comparison
Patent
1997-05-23
1999-04-20
Nelms, David
Static information storage and retrieval
Read/write circuit
Including signal comparison
365201, 365241, 365 7, G11C 1604
Patent
active
058963243
ABSTRACT:
A method for detecting an overvoltage signal applied to a semiconductor memory device address pin reduces stress on the device and simplifies the testing process by dividing the voltage of the overvoltage signal and comparing it to a reference voltage, thereby generating a difference signal. The difference signal is buffered by a drive stage which generates a test mode output signal that places the memory device in a test mode. An overvoltage detection circuit for implementing this method includes a comparison signal generator having a resistive voltage divider for dividing the overvoltage signal and generating a comparison signal. A differential amplifier compares the comparison signal to a reference signal from a reference signal generator. The differential amplifier generates a difference signal which is coupled to a drive stage which generates a test mode output signal. The comparison signal generator, the differential amplifier, and the drive stage can be enabled in response to a test mode enable signal.
REFERENCES:
patent: 5063304 (1991-11-01), Iyengar
patent: 5300824 (1994-04-01), Iyengar
Jang Tae-Sung
Park Chan-Jong
Le Thong
Nelms David
Samsung Electronics Co,. Ltd.
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