Output circuit of a semiconductor memory device for providing an

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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365149, G11C 700

Patent

active

059532629

ABSTRACT:
An output circuit for a semiconductor memory device sets an intermediate potential supplied to an output terminal to a value greater than the minimum potential defining the high-level potential or smaller than the maximum potential defining the low-level potential. A pulse outputting circuit outputs a pulse when the data output terminal is set to a high-impedance state. A potential switching circuit changes a potential of a data output terminal to the intermediate potential before the potential at the data output terminal is switched from one of the high-level potential and the low-level potential to the other when the pulse signal is supplied by the pulse outputting circuit. The intermediate potential is held by a capacitance of the data output terminal. The intermediate potential is set to a level within an allowable range for a level of one of the high-level potential and the low-level potential.

REFERENCES:
patent: 4604731 (1986-08-01), Konishi
patent: 4774692 (1988-09-01), Oishi et al.
patent: 5638326 (1997-06-01), Hollmer et al.
patent: 5796661 (1998-08-01), Kim

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