Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S040000, C257SE29274, C438S156000, C438S151000
Reexamination Certificate
active
07138682
ABSTRACT:
A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insulation layer in a region corresponding to a region of the gate electrode, a semiconductor layer (50) arranged to cover the source or drain (40) and the insulation layer, a drain or source (60) provided on the semiconductor in a portion of a region corresponding to a region of the source or drain (40) that overlaps with the gate electrode, and a channel (70) formed between the source or drain (40) and the drain or source (60) and having a length defined by a film thickness of the semiconductor layer (50).
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Kamata Toshihide
Yoshida Manabu
Fulk Steven J.
National Institute of Advanced Industrial Science and Technology
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Smith Bradley K.
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