Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-08-02
2005-08-02
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S040000, C257S347000, C313S504000
Reexamination Certificate
active
06924508
ABSTRACT:
A first moisture blocking layer formed of a silicon type nitride film such as SiNx or the like is formed over the entire surface so as to cover a drain electrode and a source electrode of a TFT. On the first moisture blocking layer, a first planarization film formed of an organic material is provided. On the first planarization film, a second moisture blocking layer formed of SiNx or the like is provided. In the peripheral region, the second moisture blocking layer extends down on the first moisture blocking layer and is connected with the first moisture blocking layer. Also, a sealing glass is bonded to the second moisture blocking layer using the sealing member. By enclosing the first planarization film by the first moisture blocking layer and the second moisture blocking layer, intrusion of external moisture can be effectively prevented.
REFERENCES:
patent: 2003/0230976 (2003-12-01), Nishikawa et al.
Nishikawa Ryuji
Yoneda Kiyoshi
Cantor & Colburn LLP
Loke Steven
Sanyo Electric Co,. Ltd.
LandOfFree
Organic electroluminescence panel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organic electroluminescence panel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic electroluminescence panel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3461079