Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2005-08-30

2005-08-30

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185230, C365S189070

Reexamination Certificate

active

06937522

ABSTRACT:
In writing N level of multilevel data to nonvolatile semiconductor memory by repeating a verification process, a verification result of a memory cell where the Nth threshold level which is the highest level is to be written as an expected level is invalidated until completion of writing to a memory cell where the (N−1)th and lower level is to be written. The verification result of the memory cell where the Nth level is to be written is validated after reaching the (N−1)th write level. A reference current supplied to a sense amplifier corresponding to the Nth level is set at at least a level allowing no indeterminate sensing of a sense amplifier. In verification of the Nth level data, a word line voltage supplied for verify-reading is raised from VW1to VW2.

REFERENCES:
patent: 5754469 (1998-05-01), Hung et al.
patent: 6452837 (2002-09-01), Mori et al.
patent: 6606266 (2003-08-01), Tsuruda
patent: 6714455 (2004-03-01), Banks
patent: 4-057294 (1992-02-01), None
patent: 9-198882 (1997-07-01), None
patent: 10-305482 (1998-11-01), None

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