Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-23
2005-08-23
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S424000
Reexamination Certificate
active
06933240
ABSTRACT:
A hard mask made from polysilicon is used to etch a layer to be patterned. The hard mask is patterned using a resist mask. The etching of the hard mask is carried out in such a way that the openings which are etched into the hard mask have inclined sidewalls. This reduces the cross section of the openings, with the result that smaller openings can be formed in the layer that is to be patterned than the openings which have been predetermined by the resist mask. The hard mask is etched using only HBr. The inclination of the openings etched into the hard mask can be set by way of the TCP power and/or the bias power of a TCP etching chamber, and/or by way of the HBr flow rate.
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Mahorowala, A. P. et al.: “Etching of Polysilicon in Inductively Coupled Cl2and HBr Discharges—i. Experimental Characterization of Polysilicon Profiles”, American Vacuum Society, J. Vac. Sci. Technol. B20(3), May/Jun. 2002, pp. 1055, 1057, 1059, 1061, and 1063.
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Kronke Matthias
Lazar Laura
Greenberg Laurence A.
Infineon - Technologies AG
Lebentritt Michael
Locher Ralph E.
Luk Olivia T
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