Organic BARC with adjustable etch rate

Details Organic BARC with adjustable etch rate Organic BARC with adjustable etch rate

2007-08-28

2007-08-28

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S715000, C438S717000, C438S725000, C438S736000

Reexamination Certificate

active

10957111

ABSTRACT:
Systems and method for adjusting an etch rate of an organic bottom antireflective coating (BARC) layer on a wafer. The BARC layer can be exposed to an energy source at varied intensities to determine a relationship between bake temperature and solubility of the BARC after baking, which correlates to a rate at which the BARC can be etched. The BARC can be a cross-linking BARC, which becomes more cross-linked as bake temperature is increased, resulting in decreased etch rate, or can be a cleaving BARC, which is subject to removal of etch-resistant monomers as bake temperature is increased, resulting in increased etch rate. Thus, the invention provides for adjustable BARC etch rates that can be aligned to an etch rate of a photoresist deposited over the BARC to permit concurrent etching of both layers while mitigating structural defects that can occur if etch rates of the respective layers differ.

REFERENCES:
patent: 5593725 (1997-01-01), Park et al.
patent: 6699641 (2004-03-01), Hellig et al.
patent: 6787452 (2004-09-01), Sudijono et al.
patent: 2003/0198898 (2003-10-01), Lin et al.
patent: 2004/0018451 (2004-01-01), Choi
patent: 2004/0048194 (2004-03-01), Breyta et al.
patent: 2004/0265713 (2004-12-01), Shiobara et al.
patent: 2005/0064322 (2005-03-01), Babich et al.
patent: 2005/0167514 (2005-08-01), Kaushal et al.

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