Organic anti-reflective coating polymer, its preparation...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S326000, C430S273100, C430S311000, C430S330000, C430S331000

Reexamination Certificate

active

10811558

ABSTRACT:
Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect.wherein m is an integer ranging from 5 to 5000.

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patent: 2003/0219682 (2003-11-01), Wakiya et al.
patent: 8-29972 (1996-02-01), None
Machine-assisted English translation for JP8-29972 as provided by JPO.

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