Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-20
2009-02-10
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S585000, C438S597000, C257SE21170
Reexamination Certificate
active
07488684
ABSTRACT:
An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.
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John A Glass Jr., “Chemical Vapor Deposition Precursor Chemistry. Formation of Pure Aluminum, Alumina, and Aluminum Boride Thin Films from Boron-Containing Precursor Compounds by Chemical Vapor Deposition,” Chem. Mater. 1992, 4, 530-538.
Cho Jun-Hyun
Cho Kyoo-Chul
Cho Youn-Joung
Choi Jung-Sik
Kim Mi-Ae
Fourson George
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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