Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-08-01
2006-08-01
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S039000, C438S164000, C438S343000, C257S170000, C257S452000, C257S466000, C257S496000, C257S623000, C257SE29185
Reexamination Certificate
active
07084044
ABSTRACT:
The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.
REFERENCES:
patent: 3975690 (1976-08-01), Fleming
patent: 6277663 (2001-08-01), Matsumoto et al.
patent: 2000269604 (2000-09-01), None
Parent case Serial No. 10/120,923 filed Apr. 11, 2002 entitled “Optoelectronic Device and Method of Manufacture Thereof” to Charles W. Lentz, et al.; allowed Apr. 7, 2004.
Lentz Charles W.
Nechay Bettina A.
Ougazzaden Abdallah
Parayanthal Padman
Przybylek George J.
Estrada Michelle
Hitt Gaines P.C.
Tobergte Nicholas J.
TriQuint Technology Holding Co.
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