4. Coherent light generators
  5. Particular active media
  6. Semiconductor

Abdallah Ougazzaden

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Application of InAIAs double-layer to block dopant...

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate

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Diffusion barrier spikes for III-V structures

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Dopant diffusion barrier layer for use in III-V structures

Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate

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Dopant diffusion blocking for optoelectronic devices using...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate

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Double layer beam expander for device-to-fiber coupling

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate

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Profile ID: LFUS-PAI-P-1172440

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