Optimized MRAM current sources

Details Optimized MRAM current sources Optimized MRAM current sources

2006-05-30

2006-05-30

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S209000, C365S225500, C365S243500

Reexamination Certificate

active

07054185

ABSTRACT:
A word current source (445) for a magnetoresistive random access memory circuit (420) includes an n-channel transistor (430) including a gate, a source and a drain, where the source is coupled to a supply ground, and the drain is coupled to the magnetoresistive random access memory circuit. A positive supply voltage is coupled to the magnetoresistive random access memory circuit (420) so as to allow current to flow through the magnetoresistive random access memory circuit (420) when an activation signal is applied to the gate by the control circuit.

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