High reliability area efficient non-volatile configuration...

Details High reliability area efficient non-volatile configuration... High reliability area efficient non-volatile configuration...

2006-05-02

2006-05-02

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189020

Reexamination Certificate

active

07038932

ABSTRACT:
Configuration data is stored in one or more rows of non-volatile ferroelectric memory cells, where these rows are formed adjacent to rows of a primary memory array. The primary memory array includes non-volatile ferroelectric memory cells, and the memory cells of the array are substantially the same in construction to the cells of the configuration data rows. This allows at least some of the circuitry utilized to access data from the primary array to be utilized to access the configuration data, which promotes an efficient use of resources among other things. Additionally, the configuration data can be transferred to volatile registers serially at startup to simplify routing and design and thereby conserve space. The volatile registers are operatively associated with configuration data circuitry that makes use of the configuration data at startup or later time(s).

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