Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S653000, C438S656000, C438S639000, C438S672000, C438S740000
Reexamination Certificate
active
07091087
ABSTRACT:
A flash memory comprising floating gate devices being connected to one-another through their source electrodes being self-aligned to their respective gate electrodes, a local tungsten interconnect making a substantially continuous connection to the sources. The flash memory is formed by forming floating gate devices, each comprising a floating gate, forming a source electrode for each floating gate device and connecting each source electrode together by a conductive implant into a defined active area, forming a nitride barrier layer overlying each transistor gate, forming a planarized insulation layer over the nitride barrier layer, removing portions of the planarized insulation layer while using the nitride barrier layer to self-align an interconnect via opening to the source electrodes, forming a metal interconnect into the interconnect via, the metal interconnect running a major length of the interconnected source electrodes and making contact therebetween, and forming a metal drain plug for each floating gate device.
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Micro)n Technology, Inc.
Paul David J.
Thomas Toniae M.
Wilczewski Mary
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