Optical testing of a semiconductor

Details Optical testing of a semiconductor Optical testing of a semiconductor

1978-10-03

1980-07-08

Corbin, John K.

Optics: measuring and testing

By polarized light examination

Of surface reflection

250571, 356237, 356402, G01N 2132

Patent

active

042114888

ABSTRACT:
A method of optically testing electrical parameters of a surface of a semiconductor including carrier mobility and recombination time is disclosed which includes the step of irradiating the surface with a first beam of monochromatic light having a wavelength less than the wavelength corresponding to the band-gap energy of the semiconductor, resulting in the excitation of electrons and holes at the semiconductor surface. The surface is simultaneously irradiated with a second beam of monochromatic light having a wavelength larger than the wavelength corresponding to the band-gap energy of the semiconductor, whereby part of the second beam is reflected from the surface. The intensity of this reflected beam is measured and the magnitude thereof is a measure of the carrier mobility and recombination time at the semiconductor surface.

REFERENCES:
patent: 3555455 (1971-01-01), Gruber et al.
patent: 3988564 (1976-10-01), Garvin et al.
Sooy, W. R. et al., "Switching of Semiconductor Reflectivity by a Giant Pulse Laser", Applied Physics Letters, vol. 5, No. 3, pp. 54-56, Aug. 1, 1964.
Sosnowski, L., "Contribution of Current Carriers in the Reflection of Light from Semiconductors", Physical Review vol. 107, No. 4, Aug. 15, 1957.
Birnbaum, "Modulation of the Reflectivity of Semiconductors," Journal of Applied Physics, pp. 652-658, vol. 36, No. 2.
Rassudova et al., "Precision Diffraction Gratings for Metrologic Purposes", Optics and Spectroscopy, Aug. 1961, pp. 136-137.
Vasil'eva et al., Measurement of the Selective Growth and Etching Rates of GaAs, Inorganic Materials, vol. 12, Feb. 1976, pp. 162-164.

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