Optical exposure method

Details Optical exposure method Optical exposure method

1996-10-25

2000-04-04

Nguyen, Nam

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 25049222, 25049223, G03C 500, G03F 900

Patent

active

06045976&

ABSTRACT:
An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

REFERENCES:
patent: 4440839 (1984-04-01), Mottier
patent: 4593351 (1986-06-01), Hong et al.
patent: 4922308 (1990-05-01), Noguchi et al.
patent: 4931830 (1990-06-01), Suwa et al.
patent: 4947413 (1990-08-01), Jewell et al.
patent: 4992825 (1991-02-01), Fukada et al.
patent: 5032009 (1991-07-01), Gibbons et al.
patent: 5100234 (1992-03-01), Ishibashi et al.
patent: 5274420 (1993-12-01), Chastang et al.
patent: 5275894 (1994-01-01), Tanabe
patent: 5275896 (1994-01-01), Garofalo et al.
patent: 5298365 (1994-03-01), Okamoto et al.
patent: 5300967 (1994-04-01), Kamon
patent: 5300972 (1994-04-01), Kamon
patent: 5303002 (1994-04-01), Yan
patent: 5326659 (1994-07-01), Liu et al.
patent: 5329333 (1994-07-01), Noguchi et al.
patent: 5331369 (1994-07-01), Terasawa et al.
patent: 5362585 (1994-11-01), Adams
patent: 5387961 (1995-02-01), Kang
patent: 5424803 (1995-06-01), Noguchi
patent: 5432588 (1995-07-01), Kamon
patent: 5436761 (1995-07-01), Kamon
patent: 5438204 (1995-08-01), Von Bunau et al.
patent: 5442184 (1995-08-01), Palmer et al.
patent: 5455144 (1995-10-01), Okamoto et al.
patent: 5465220 (1995-11-01), Haruki et al.
patent: 5526094 (1996-06-01), Noguchi et al.
patent: 5541026 (1996-07-01), Matsumoto
8257b Journal of Vacuum Science & Technology B 9 (1991) Nov/Dec., No. 6, New York, US (Improving Projection Lithography Image Illumination by Using Sources Far from the Optical Axis).
362 Japanese Journal of Applied Physics 30(1991) Nov., No. 11B, Part 1, Tokyo, JP (Photolitography System Using Annular Illumination).

Affiliated with

Also associated with

Rating

Optical exposure method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical exposure method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical exposure method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-363662