Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-01-05
2010-12-28
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000, C438S164000, C257SE21125, C257SE31041
Reexamination Certificate
active
07858450
ABSTRACT:
An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.
REFERENCES:
patent: 5888675 (1999-03-01), Moore et al.
patent: 5956581 (1999-09-01), Yamazaki et al.
patent: 2001/0055830 (2001-12-01), Yoshimoto
patent: 2002/0009818 (2002-01-01), Yoshimoto
patent: 2003/0008215 (2003-01-01), Mukherjee
patent: 2003/0061984 (2003-04-01), Maekawa et al.
patent: 2003/0092275 (2003-05-01), Yang
patent: 2003/0153182 (2003-08-01), Yamazaki et al.
patent: 2004/0134417 (2004-07-01), Kim
patent: 2004/0161913 (2004-08-01), Kawasaki et al.
patent: 2004/0266078 (2004-12-01), Kim
patent: 1421935 (2003-06-01), None
patent: 1435813 (2003-08-01), None
patent: 1454332 (2003-11-01), None
Chung Ui-Jin
Kang Myung-Koo
Lee Jae-Bok
F. Chau & Associates LLC
Ghyka Alexander G
Mustapha Abdulfattah
Samsung Electronics Co,. Ltd.
LandOfFree
Optic mask and manufacturing method of thin film transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optic mask and manufacturing method of thin film transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optic mask and manufacturing method of thin film transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4235016