Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-14
2011-06-14
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S381000, C257SE21006, C257SE21077, C257SE21051, C257SE21229, C257SE21304, C257SE21311, C257SE21632, C257SE21645
Reexamination Certificate
active
07960224
ABSTRACT:
A method for operating a memory device includes applying a sequence of bias arrangements across a selected metal-oxide memory element to change among resistance states. The sequence of bias arrangements includes a first set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the first resistance state to a third resistance state, and a second set of one or more pulses to change the resistance state of the selected metal-oxide memory element from the third resistance state to the second resistance state.
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Chang Kuo-Pin
Chen Yi-Chou
Chien Wei-Chih
Hsieh Kuang-Yeu
Lai Erh-Kun
Hayes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Nhu David
LandOfFree
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