Open tube-type impurity-diffusion apparatus for simultaneously d

Details Open tube-type impurity-diffusion apparatus for simultaneously d Open tube-type impurity-diffusion apparatus for simultaneously d

1991-07-19

1993-08-24

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118725, C23C 1600

Patent

active

052384985

ABSTRACT:
An open-tube type impurity diffusion apparatus for simultaneously diffusing impurities into a plurality of wafers in a same controlled environment. The apparatus includes a diffusion box including a diffusion source, a diffusion box for holding a plurality of wafers, a slider including a body having a perforated portion and non-perforated portion and heaters disposed in a furnace. Because the apparatus can be used to simultaneously diffuse impurities into a plurality of wafers once, a mass of semiconductors can be produced, production cost and time can be decreased, and deviation of the wafer characteristics from wafer to wafer within a batch can be minimized.

REFERENCES:
patent: 3632429 (1972-01-01), Maeda
patent: 3705567 (1972-12-01), Emels
Wolf, Silicon Processing for the VLSI Era, vol. I .COPYRGT.1986, Lattice Press, Sunset Beach, Calif. pp. 264-267.
Ohishi et al., "Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors", Japanese Journal of Applied Physics, vol. 2, No. 2, Feb. 1990, pp. L213-L216.

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