Open source/drain junction field effect transistor

Details Open source/drain junction field effect transistor Open source/drain junction field effect transistor

2006-08-15

2009-11-10

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C257S256000

Reexamination Certificate

active

07615425

ABSTRACT:
The disclosure herein pertains to fashioning an n channel junction field effect transistor (NJFET) and/or a p channel junction field effect transistor (PJFET) with an open drain, where the open drain allows the transistors to operate at higher voltages before experiencing gate leakage current. The open drain allows the voltage to be increased several fold without increasing the size of the transistors. Opening the drain essentially spreads equipotential lines of respective electric fields developed at the drains of the devices so that the local electric fields, and hence the impact ionization rates are reduced to redirect current below the surface of the transistors.

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U.S. Appl. No. 11/493,229, filed Jul. 26, 2006, El-Kareh et al.
Office Action Dated Aug. 28, 2008 for U.S. Appl. No. 11/493,229.

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