Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-16
1999-08-03
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438639, 438648, 438687, H01L 214763
Patent
active
059337532
ABSTRACT:
This invention relates to a method of forming a bottomless liner structure. The method involves the steps of first obtaining a material having a via. Next, a first layer is deposited on the material, the first layer covering the sidewalls and bottom of the via. Finally, a second layer is sputter deposited on the first material, the material Rf biased during at least a portion of the time that the second layer is sputter deposited, such that the first layer deposited on the bottom of the via is substantially removed and substantially all of the first layer deposited on the sidewalls of the via is unaffected.
REFERENCES:
patent: 4717462 (1988-01-01), Homma et al.
patent: 4968644 (1990-11-01), Gallagher et al.
patent: 5006484 (1991-04-01), Harada
patent: 5082802 (1992-01-01), Gelsomini
patent: 5093710 (1992-03-01), Higuchi
patent: 5098860 (1992-03-01), Chakravorty
patent: 5385868 (1995-01-01), Chao et al.
patent: 5514622 (1996-05-01), Bornstein et al.
patent: 5556506 (1996-09-01), Contreras et al.
patent: 5616519 (1997-04-01), Ping
patent: 5676587 (1997-10-01), Landers et al.
Simon Andrew H.
Uzoh Cyprian E.
Berry Renee R.
Bowers Charles
International Business Machines - Corporation
Townsend Tiffany L.
LandOfFree
Open-bottomed via liner structure and method for fabricating sam does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Open-bottomed via liner structure and method for fabricating sam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Open-bottomed via liner structure and method for fabricating sam will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-859779