OPC model calibration process

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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Details

C716S030000, C250S252100, C250S307000, C430S005000, C702S085000, C382S195000

Reexamination Certificate

active

07900169

ABSTRACT:
A method of calibrating a model of a lithographic process includes a plurality of test features each having different widths that vary from a resolvable feature width that is known to be resolvable by the lithographic process, to a width that is known not to be resolvable by the lithographic process. The test features and patterns are specifically designed to include features that approach or exceed the resolution of the lithographic process, and range from known resolvable patterns to patterns that are expected to fail to be resolved. The printed test patterns are inspected for printability and the extremum intensity values associated with neighboring printable and non-printable test patterns are used to determine a constant threshold value to be used in a resist process model.

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