Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-25
2006-04-25
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000
Reexamination Certificate
active
07033890
ABSTRACT:
An ONO formation method comprises the following procedures. First, a bottom oxide layer is formed on a silicon substrate, and then a silicon-rich nitride layer is deposited on the bottom oxide layer. Then, an oxidation process is performed to react with silicon atoms in the silicon-rich nitride layer, so as to form a top oxide layer. Alternatively, the silicon-rich layer can be replaced with a combination of a nitride layer and a polysilicon layer. The oxidation process can consume the polysilicon layer into the top oxide layer, and proper oxygen is introduced into the nitride layer.
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Booth Richard A.
Skymedi Corporation
Volentine Francos & Whitt PLLC
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