ONO fabrication process for increasing oxygen content at...

Details ONO fabrication process for increasing oxygen content at... ONO fabrication process for increasing oxygen content at...

2006-04-25

2006-04-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S954000

Reexamination Certificate

active

07033957

ABSTRACT:
Process for reducing charge leakage in a SONOS flash memory device, including in one embodiment, forming a bottom oxide layer of an ONO structure on the semiconductor substrate to form an oxide/silicon interface having a first oxygen content adjacent the oxide/silicon interface; treating the bottom oxide layer to increase the first oxygen content to a second oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer. In another embodiment, process for reducing charge leakage in a SONOS flash memory device, including forming a bottom oxide layer of an ONO structure on a surface of the semiconductor substrate having an oxide/silicon interface with a super-stoichiometric oxygen content adjacent the oxide/silicon interface; and depositing a nitride charge-storage layer on the bottom oxide layer.

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