One-transistor composite-gate memory

Details One-transistor composite-gate memory One-transistor composite-gate memory

2007-08-21

2007-08-21

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S266000

Reexamination Certificate

active

11489880

ABSTRACT:
One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

REFERENCES:
patent: 6140157 (2000-10-01), Warren et al.
patent: 6589839 (2003-07-01), Basceri et al.
patent: 6674110 (2004-01-01), Gnadinger
patent: 7045406 (2006-05-01), Huotari et al.
S.A. Prosandeev, Sep. 1, 2002, pp. 1-5, “On the average charge of the oxygen vacancy in perovskites necessary for kinetic calculations”.
Yang et al., 2001, IEEE, pp. 1-4, “One-Transistor PZT/Al2O3and BLT/ Al2O3Stacked Gate Memory”.
Jun. 25, 2002, www.siliconstrategies.com, pp. 1-3, “Rolltronics' ‘roll-to-roll’ chip process could enable nanoscale memories”.
Park et al., Mar. 29, 1999, Applied Physics Letters, pp. 1907-1909, “Differences in nature of defects between SrBi2Ta2O9and Bi4Ti3O12”.
Noh et al., Dec. 2001, Journal of Korean Physical Society, pp. S35-S38 “A New Ferroelectric Material for FRAM Applications: Lanthanum-Substituted Bismuth Titanate”.
Gerstner et al., Nov. 15, 1998, Journal of Applied Physics, pp. 5647-5651, “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”.
Kakuno et al., 2002, Journal of Crystal Growth, pp. 487-491, “Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser deposition”.
John Baliga, Nov. 1, 1999, Semiconductor International, pp. 1-9, “New materials Enhance Memaory Perfromance”.

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