One time programming memory cell using MOS device

Details One time programming memory cell using MOS device One time programming memory cell using MOS device

2007-12-11

2007-12-11

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185040, C365S185140, C365S185260, C365S185180

Reexamination Certificate

active

11272657

ABSTRACT:
An electroless plating apparatus is provided. The electroless plating apparatus includes a wafer holder; a chemical dispensing nozzle over the wafer holder; a conduit connected to the chemical dispensing nozzle; and a radiation source over the wafer holder.

REFERENCES:
patent: 5155701 (1992-10-01), Komori et al.
patent: 6956258 (2005-10-01), Peng
Suehle, J. S., et al., “Ultrathin Gate Oxide Reliability: Physical Models, Statistics, and Characterization,” IEEE Transactions on Electron Devices, vo. 49, No. 6, Jun. 2002, pp. 958-971.
Carter, J. R., et al., “Circuit-Level Modeling for Concurrent Testing of Operational Defects due to Gate Oxide Breakdown,” appears in the Proceedings of the 2005 Design, Automation, and Test in Europe (DATE), Munich, Germany, Mar. 7-11, 2005, http://www.ee.duke.edu/˜sorin/papers/date05—model.pdf.

Affiliated with

Also associated with

Rating

One time programming memory cell using MOS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One time programming memory cell using MOS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One time programming memory cell using MOS device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3893784