Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-07
2007-08-07
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE27103, C257SE21345, C257SE21336, C257SE21422
Reexamination Certificate
active
11058881
ABSTRACT:
A one time programmable (OTP) electrically programmable read only memory (EPROM) transistor (100) having an increased breakdown voltage (BVdss) is disclosed. The increased breakdown voltage reduces the probability that the OTP EPROM (100) will breakdown during a programming operation by maintaining a breakdown voltage above a programming voltage. The breakdown voltage is, at least partially, increased by forming a p-doped region (140) within a semiconductor substrate (102), and forming a drain region (166) of the OTP EPROM (100) within the p-doped region (140).
REFERENCES:
patent: 5394101 (1995-02-01), Mitros
patent: 6509606 (2003-01-01), Merrill et al.
patent: 6882009 (2005-04-01), Ker et al.
patent: 6887758 (2005-05-01), Chindalore et al.
patent: 7144795 (2006-12-01), Lines
patent: 2003/0228737 (2003-12-01), Efland et al.
patent: 2004/0140497 (2004-07-01), Adams et al.
patent: 2004/0235246 (2004-11-01), Wu et al.
patent: 2005/0045948 (2005-03-01), Springer
U.S. Appl. No. 10/880,872, filed Jun. 30, 2004, Mitros.
Mitros Jozef Czeslaw
Tatman David
Brady III W. James
Dinh Thu-Huong
Garner Jacqueline L.
Lindsay, Jr. Walter
Telecky , Jr. Frederick J.
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