One hundred millimeter high purity semi-insulating single...

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Reexamination Certificate

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C428S409000, C257S077000, C117S951000

Reexamination Certificate

active

07601441

ABSTRACT:
A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm−2, and a combined concentration of shallow level dopants less than 5E16 cm−3.

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