Solid-state imaging device, method of producing the same and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S060000, C438S075000, C438S144000, C257SE21617

Reexamination Certificate

active

07579207

ABSTRACT:
The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.

REFERENCES:
patent: 5235426 (1993-08-01), Shibusawa
patent: 5895944 (1999-04-01), Yamada
patent: 6160580 (2000-12-01), Nakashiba
patent: 6335220 (2002-01-01), Shioyama et al.
patent: 6580105 (2003-06-01), Hatano et al.
patent: 09-036349 (1997-02-01), None

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