One chamber in-situ etch process for oxide and conductive materi

Details One chamber in-situ etch process for oxide and conductive materi One chamber in-situ etch process for oxide and conductive materi

1990-10-09

1992-03-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156656, 156657, 1566591, 156662, 252 791, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

050947125

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in-situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile which has a controlled slope.

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