Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2006-09-05
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27016, C326S030000
Reexamination Certificate
active
07102200
ABSTRACT:
An on-die termination resistor includes three transistors and a resistor. The resistor keeps at least one of the transistors from entering the saturation region and therefore improves the I-V characteristics of the termination resistor.
REFERENCES:
patent: 5329190 (1994-07-01), Igarashi et al.
patent: 5680060 (1997-10-01), Banniza et al.
patent: 5821768 (1998-10-01), Rau
patent: 6351138 (2002-02-01), Wong
patent: 6362655 (2002-03-01), Abraham et al.
patent: 6388495 (2002-05-01), Roy et al.
patent: 6424169 (2002-07-01), Partow et al.
patent: 6429685 (2002-08-01), Stockstad
patent: 6525558 (2003-02-01), Kim et al.
patent: 6560290 (2003-05-01), Ahn et al.
Jed Griffin and David Johnson, “Large Signal Active Resistor Output Driver”, IEEE 42ndSymposium on Circuits and Systems (Aug. 8-11, 1999).
Masashi Horiguchi et al., “ATunable CMOS-DRAM Voltage Limiter with Stabilized Feedback Amplifier,” IEEE Journal of Solid-State Circuits, vol. 25, No. 5, Oct. 1990.
Fan Yongping
Smith Jeffrey E
Dolan Jennifer M
Intel Corporation
Jr. Carl Whitehead
Kenyon & Kenyon LLP
LandOfFree
On-die termination resistor with analog compensation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with On-die termination resistor with analog compensation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and On-die termination resistor with analog compensation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3593722