Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-05-08
2010-10-19
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S379000
Reexamination Certificate
active
07816197
ABSTRACT:
One or more on-chip VNCAP or MIMCAP capacitors utilize a variable MOS capacitor to improve the uniform capacitance value of the capacitors. This permits the production of silicon semiconductor chips on which are mounted capacitors having capacitive values that are precisely adjusted to be within a range of between about 1% and 5% of their design value. This optimization can be achieved by the use of a back-to-back connection between a pair of the variable MOS capacitors for DC decoupling. It involves the parallelization of on-chip BEOL capacitance of VNCAP and/or MIMCAP capacitors by the insertion in the FEOL of pairs of back-to-back variable MOS capacitors.
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Kim Jong-hae
Kim Moon J.
Plouchart Jean-Oliver
Trzcinski Robert E.
Daugherty Patrick J.
Dickey Thomas L
Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
International Business Machines - Corporation
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