Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-07-08
1999-09-21
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438559, 438605, H01L 2128
Patent
active
059566043
ABSTRACT:
A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.
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Lee Sabrina L.
Lu Toh-Ming
Mello Kevin E.
Murarka Shyam P.
Soss Steven R.
Berry Renee R.
Bowers Charles
Moran John F.
Sachs Michael C.
The United States of America as represented by the Secretary of
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