Ohmic contact of N-GaAs to electrical conductive substrates by c

Details Ohmic contact of N-GaAs to electrical conductive substrates by c Ohmic contact of N-GaAs to electrical conductive substrates by c

1979-03-26

1980-07-22

Rutledge, L. Dewayne

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

136 89TF, 148 15, 148 33, 148 331, 148174, 357 16, 357 59, 357 65, 357 71, 427 87, 427 88, 427113, H01L 2348, H01L 2946

Patent

active

042138019

ABSTRACT:
Thin layers of polycrystalline n-type GaAs have been deposited on a conducting substrate such as graphite. These contacted GaAs layers exhibit desirable properties for device applications, i.e., adequate cohesion between the GaAs and the substrate, good electrical contact to the conducting substrate, and good nucleation of the GaAs on the substrate yielding pinhole free or near pinhole free GaAs layers composed of large grains. These properties are obtained by first depositing a very thin coating, a coating with a nominal thickness between 1000 A and 250 A, of a Group IV element, Ge, Si, or Sn, onto the conducting substrate and then depositing the GaAs over this thin layer.

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