Ohmic contact and method of manufacture

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438518, 438519, 438606, 438933, 438934, 438938, H01L 2128, H01L 213205

Patent

active

060431431

ABSTRACT:
A method of improving contact resistance in a multi-layer heterostructure comprising the steps of providing a substrate, growing a crystalline material on the substrate, and doping close to an interface of the substrate and the crystalline material with n-silicon to provide continuity at the interface.

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