Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-04
2000-03-28
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438518, 438519, 438606, 438933, 438934, 438938, H01L 2128, H01L 213205
Patent
active
060431431
ABSTRACT:
A method of improving contact resistance in a multi-layer heterostructure comprising the steps of providing a substrate, growing a crystalline material on the substrate, and doping close to an interface of the substrate and the crystalline material with n-silicon to provide continuity at the interface.
Dover Rennie William
Motorola Inc.
Niebling John F.
Zarneke David A
LandOfFree
Ohmic contact and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ohmic contact and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ohmic contact and method of manufacture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1325690