Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-22
2007-05-22
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257SE29309, C438S287000
Reexamination Certificate
active
10775908
ABSTRACT:
A high permittivity gate dielectric is used in an NROM memory cell. The gate dielectric has a dielectric constant greater than silicon dioxide and is comprised of an atomic layer deposited and/or evaporated nanolaminate structure. The NROM memory cell has a substrate with doped source/drain regions. The high-k gate dielectric is formed above the substrate between a pair of the source/drain regions. A polysilicon control gate is formed on top of the gate dielectric. The gate dielectric can have an oxide-high-k dielectric-oxide composite structure, an oxide-nitride-high-k dielectric composite structure, or a high-k dielectric-high-k dielectric-high-k dielectric composite structure.
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Ho Tu-Tu
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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