Novel gallium arsenide precursor and low temperature method of p

Details Novel gallium arsenide precursor and low temperature method of p Novel gallium arsenide precursor and low temperature method of p

1989-02-09

1990-02-20

Garvin, Patrick P.

Chemistry of inorganic compounds

Treating mixture to obtain metal containing compound

Group iiia metal or beryllium

252 623GA, 420555, C01F 1500

Patent

active

049024868

ABSTRACT:
A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and byproducts which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.

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