Light emitting diode having light-emitting and light-absorbing r

Details Light emitting diode having light-emitting and light-absorbing r Light emitting diode having light-emitting and light-absorbing r

1997-08-06

1998-10-27

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 84, 257 85, 257436, H01L 2715

Patent

active

058280855

ABSTRACT:
An active layer of a light-emitting diode is surrounded jointly by a pair of clad layers and a pair of block layers. The active layer includes a light-emitting portion and a light-absorbing portion which are continuously formed in one body. The light-emitting portion emits light when carriers are injected thereinto between the pair of clad layers, and the light-absorbing portion absorbs light coming from the light-emitting portion. A bandgap of the light-absorbing portion may be smaller than that of the light-emitting portion.

REFERENCES:
patent: 4975752 (1990-12-01), Kashima et al.
Kashima et al., "Linear InGaAsP Edge-Emitting LED'S for Single-Mode Fiber Communications," Journal of Lightwave Technology, vol. 10, No. 11, Nov. 1992, pp. 1650-1655.

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