Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1995-03-27
1998-10-27
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 55, 257 66, H01L 2904, H01L 2976
Patent
active
058280847
ABSTRACT:
The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si.sub.1 -.sub.x Ge.sub.x alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si.sub.1-x Ge.sub.x alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.
REFERENCES:
patent: 5461250 (1995-10-01), Burghartz et al.
High-Mobility GeSi PMOS and SIMOX, IEEE Electron Device Letters, vol. 14, No. 11, Nov. 1993; Effects of GE on Material and Electrical Properties of Polycrystalline Si.sub.1 -Ge For TFT Applications; Julie A. Tsai, MIT, 1994 Fall Mtg of The Electrochemical Soc.
Fabrication of Polycrystalline Si.sub.i- Ge Films on Oxide For Thin-Film Transistors, Julie Tsai, MIT.
A Low Temperature Silicon-Germanium MOS Thin-Film Transistor Technology for Large-Area Electronics, 1991 IEEE, Tsu-Jae King and Krishna C. Saraswat.
Applications of Polycrystalline Silicon-Germanium Thin Films in Metal Oxide Semiconductor Technologies; Tsu-Jae King, Mar. 1994, Technical Report No. ICL 94-031.
Noguchi Takashi
Reif Rafael
Tang Andrew J.
Tsai Julie
Kananen Ronald P.
Martin Wallace Valencia
Massachusetts Institute of Technology
Sony Corporation
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