Normally-off integrated JFET power switches in wide bandgap...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S137000, C438S156000, C438S195000, C438S369000, C438S517000, C257SE21445

Reexamination Certificate

active

07820511

ABSTRACT:
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.

REFERENCES:
patent: 3767946 (1973-10-01), Berger et al.
patent: 4107725 (1978-08-01), Yoshida et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4663547 (1987-05-01), Baliga et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 5264713 (1993-11-01), Palmour
patent: 5345097 (1994-09-01), Nakagawa
patent: 5391895 (1995-02-01), Dreifus
patent: 5610085 (1997-03-01), Yuan et al.
patent: 5710455 (1998-01-01), Bhatnagar et al.
patent: 5798539 (1998-08-01), Jorke
patent: 5945701 (1999-08-01), Siergiej et al.
patent: 6156611 (2000-12-01), Lan et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6503782 (2003-01-01), Casady et al.
patent: 6545297 (2003-04-01), Noble, Jr. et al.
patent: 6600192 (2003-07-01), Sugawara et al.
patent: 6693322 (2004-02-01), Friedrichs et al.
patent: 6767783 (2004-07-01), Casady et al.
patent: 6841812 (2005-01-01), Zhao
patent: 6943407 (2005-09-01), Ouyang et al.
patent: 6958275 (2005-10-01), Metzler
patent: 7009209 (2006-03-01), Casady et al.
patent: 7119380 (2006-10-01), Sankin
patent: 7202528 (2007-04-01), Sankin et al.
patent: 7241694 (2007-07-01), Takeuchi et al.
patent: 7556994 (2009-07-01), Sankin et al.
patent: 2002/0192894 (2002-12-01), Kalnitsky et al.
patent: 2003/0098465 (2003-05-01), Suzumura et al.
patent: 2004/0051136 (2004-03-01), Kataoka et al.
patent: 2005/0067630 (2005-03-01), Zhao
patent: 2007/0085147 (2007-04-01), Imoto
patent: 2007/0243668 (2007-10-01), Sankin et al.
patent: 20060202987 (2006-08-01), None
patent: 2006060337 (2006-06-01), None
Xie et al., “Monolithic NMOS Digital Integrated Circuits in 6H-SiC,” IEEE Electron Device Letters, vol. 15, No. 11, 1994, pp. 455-457.
Brown et al., “High Temperature Silicon Carbide Planar IC Technology and First Monolithic SiC Operational Amplifier IC,” Transactions of 2nd Int. High-Temp. Elec. Conf. (HiTEC), 1994, pp. X1-17-X1-22.e.
Agarwal et al., “Investigation of Lateral RESURF, 6H-SiC MOSFETS,” Material Science Forum, vols. 338-342, 2002, pp. 1307-1310.
Agarwal et al., “A Critical Look at the Performance Advantages and Limitations of 4H-SiC Power UMOSFET Structures,” Proceedings of 8th International Symposium on Power Semiconductor Devices and ICs, May 23, 1996, pp. 119-122.
Agarwal et al., “Temperature Dependence of Fowler-Nordheim Current in 6H- and 4H-SiC MOS Capacitors,” IEEE Electron Device Letters, vol. 18, No. 12, 1997, pp. 592-594.
Sheppard et al., “High Power Hybrid and MMIC Amplifiers Using Wide-Bandgap Semiconductor Devices on Semi-Insurlating SiC Substrates,” Digest of 60th Device Research Conference, Jun. 24-26, 2002, pp. 175-178.
Lam et al., “Ion Implant Technology for 6H-SiC MESFETs Digital ICs,” Digest of 54th Annual Device Research Conference, Jun. 24-26, 1996, pp. 157-159.
Neudeck et al., “600oC Logic Gates Using Silicon Carbide JFETS,” Government Microcircuit Applications Conference co-sponsored by DOD, NASA, DOC, DOE, NSA and CIA, Anaheim, California, Mar. 20-24, 2000.
Merrett et al., “Silicon Carbide Vertical Junction Field Effect Transistors Operated at Junction Temperatures Exceeding 300oC,” Proceeding of IMAPS International Conference and Exhibition on High Temperature Electronic (HiTECH), May 17-20, 2004, Sante Fe, NM.
Sugawara et al., “4H-SiC High Power SIJFET Module,” IEEE, Apr. 14-17, 2003, pp. 127-130.
Asano et al., “5.5kV Normally-off Low RonS 4h-SiC SEJFET,” Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka, 2001, pp. 23-26.
Li et al., “Design of 1.7 to 14kV Normally-off Trenched and Implanted Vertical JFET in 4F-SiC,” Materials Science Forum, vols. 457-460, 2004, pp. 1197-1200.
Sankin et al., “On Development of 6H-SiC LDMOS Transistors Using Silane-Ambient Implant Anneal,” Solid-State Electronics, Mar. 13, 2001.
Friedrichs et al., “SiC Power Devices with Low On-Resistance for Fast Switching Application,” ISPSO, May 22-25, 2000.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Normally-off integrated JFET power switches in wide bandgap... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Normally-off integrated JFET power switches in wide bandgap..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Normally-off integrated JFET power switches in wide bandgap... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4191223

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.