Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-06
2010-10-26
Fahmy, Wael M (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S137000, C438S156000, C438S195000, C438S369000, C438S517000, C257SE21445
Reexamination Certificate
active
07820511
ABSTRACT:
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.
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Merrett Joseph Neil
Sankin Igor
Fahmy Wael M
Ingham John C
Morris Manning & Martin LLP
Raimund Christopher W.
SemiSouth Laboratories, Inc.
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